United States Single Crystal Silicon Wafer
Specifications
- Origin
- United States
United States Single Crystal Silicon Wafer is a Semiconductors product. Key specs — Origin: United States.
Product Description
Specifications: Pseudo -square single crystalline silicon wafer (for solar use) Specifications: Growing method: Cz Type/dopant: P-type/boron Orientation: (100) +/-3 deg. Resistivity:0.5-3.0 ohm. Cm or 3.0 - 6.0 ohm.
Cm Oxygen content: Carbon content: Lifetime: >15 us or >10 us Dimensions: Pseudo-square dimensions:126 x126+/-0.5mm or 125x125+/-0.5mm Diameter:151.0+/-1.0mm or 150.0+/-1.0mm R-plane length:18.50-23.00mm Angle:90+/-3 deg.
Thickness:240+/-20 um (quantities with +tolerance should be more than -tolerance) Bow:70 um ttv:40 um Appearance: Chip: Length and depth Nick and crack: No nick and crack visible by naked eye Striation: WidthSaw mark:
