Plasma etching

Modern processes avoid wet etching, and use instead. can operate in several modes by adjusting the parameters of the plasma. Ordinary plasma etching operates between 0.1 and 5 . (This unit of pressure, commonly used in vacuum engineering, equals approximately 133.3 .) The plasma produces energetic , neutrally , that react at the surface of the wafer.

Since neutral particles attack the wafer from all angles, this process is isotropic.