BLF245 VHF Power Mos Transistor

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BLF245 VHF power Mos Transistor

D/C10+

FEATURES

*High power gain

*Low noise figure

*Easy power control

*Good thermal stability

*Withstands full load mismatch

DESCRIPTION

Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range

The transistor is encapsulated in a 4-lead SOT123 flange envelope,with a ceramic leads are isolated from the flange.

Matched gate-source voltage(V gs) groups are available on request.

RF power transistor part No. stock : Original New NXP BLF177,BLF244,BLF245,BLF278 BLF369, BLF571,BLF574, BLF578,BLF645M BGA6589, BLC6G22LS-75, BLC6G27LS-100,BLF6G20-75, BLF6G20LS-75, BLF6G22-45, BLF6G27-45, BLF7G22LS-130, BLF7G27LS-75P, BLF861A, BLF871, BLF878,BLF888, BLF881,BLF888A,BLM6G22-30G, BAP50-02, BAP50-05W, BAP64-05, BAP64-05W, BAP64Q, BAP70Q, BB145, BFG425W,BFG480W, BFG520W, BFU725F/N1, BGA2031, BGA2709, BGA2711, BGA2714, BGA7027, BGA7124, BLC6G20LS-110, BLC6G20LS-75, BLD7G22LS-50, BLF3G21-30, BLF6G10-135RN, BLF6G10LS-135R,BLF6G10LS-160, BLF6G10LS-160RN, BLF6G10LS-200RN, BLF6G10LS-260PRN, BLF6G10S-45,BLF6G20-110,BLF6G20LS-110, BLF6G20-110, BLF6G20LS-140, BLF6G20S-230PRN, BLF6G21-10G, BLF6G22-180PN, BLF6G22LS-100,BLF6G22LS-130, BLF6G22LS-180RN, BLF6G27-10,BLF6G27-10G,BLF6G27LS-100, BLF6G27LS-135, BLF6G27LS-75, BLF6G38-100, BLF7G20LS-140P, BLF7G20LS-200 Contact contact&nbsp