ABB thyristor 5SGF 30J4502

ABB Gate Turn-off asymmetric buffer layer thyristor 5SGF 30J4502

Thyristor type:Gate Turn-off asymmetric buffer layer thyristor

Thyristor model:5SGF 30J4502

Parameter

VDRM = 4500 V

ITGQM = 3000 A

ITSM = 24KA

VT0 = 1.8 V

rT = 0.70 m&#937

VDclink = 3000 V

Description

GTOs (Gate Turn-off Thyristors) are optimized for low conduction losses. The typical on-off switching frequency is in the range of 200 - 500 hertz for most applications. GTOs are, by nature, relatively slow switches. Typical transition times from on to off state and vice versa are in a range of 10 - 30 microseconds. All GTOs require protective networks called "snubbers" for turn-on and turn-off. The turn-on snubber circuit, in essence an inductor, limits the rate of current rise. For turn-off, the GTO requires a device that limits the rate of voltage rise, in essence a capacitor.

All ABB GTOs are press-pack devices. They are pressed with a relatively high force onto heat-sinks which also serve as electrical contacts to the power terminals.

Asymmetric GTOs are divided in two categories: Buffer layer and Standard. Buffer layer GTOs have exceptionally low on-state and dynamic losses. Fine pattern types (5SGF) are optimised for fast switching and transparent emitter (5SGT) for low on-state losses. The Standard GTOs have excellent trade-off between on-state and switching losses.

Features

1,Patented free-floating silicon technology

2,Low on-state and switching losses

3,Annular gate electrode

4,Industry standard housing

5,Cosmic radiation withstand rating