808 nm Laser Diode K81S09W-10.00W
Specifications
- Origin
- Beijing China(Mainland)
- Price Term
- FOB
808 nm Laser Diode K81S09W-10.00W is a Resonators product. Key specs — Origin: Beijing China(Mainland); Price Term: FOB.
Product Description
Certification:ISO9001
Key Features 808 nm Laser Diode K81S09W-10.00W：
10W output power 808nm wavelength Window packagesApplications 808 nm Laser Diode K81S09W-10.00W：
Solid-state laser pumping Medical/ophthalmic Meterials processing Graphic arts Free-space communication Beacons/illuminationSpecifications (25℃) | Symbol | Unit | K81S09W-2.50W | K81S09W-5.00W | K81S09W-6.00W | K81S09W-10.00W | |
Optical data | CW-output power | Po | W | 2.5 | 5 | 6 | 10 |
Center wavelength (1) | lc | nm | 808 | ||||
Tolerance of l | - | nm | ±3, ±10 | ||||
Spectral width (FWHM) | △l | nm | <3 | ||||
Temperature drift of l | - | nm/℃ | ~0.3 | ||||
Emitting area | Dimensions | W×H | µm | 150×1 | 200×1 | 200×1 | 400×1 |
FWHM beam divergence | Parallel to junction | θ∥ | degree | 10 | |||
Perpendicular to junction | θ⊥ | degree | <40，<10，<2 | ||||
Electrical data | Operation current | Iop | A | 2.5 | 5.3 | 6.5 | 10.0 |
Threshold current | Ith | A | 0.4 | 0.6 | 0.6 | 1.5 | |
Conversion efficiency(1) | η | % | 40~55 | ||||
Slope efficiency(2) | ηD | W/A | 0.8~1.2 | ||||
Operation voltage | Vop | V | 1.8 | 2.1 | 2.1 | 2.2 | |
Reverse voltage | Vre | V | 2 | ||||
PD data | Current | Imo | mA | 0.20~1.50 | |||
TEC data | Max. current | It | A | ||||
