808 nm Laser Diode K81S02M-15.00W
Specifications
- Origin
- Beijing China(Mainland)
- Price Term
- FOB
808 nm Laser Diode K81S02M-15.00W is a Electronic Signs product. Key specs — Origin: Beijing China(Mainland); Price Term: FOB.
Product Description
Certification:ISO9001
Key Features 808 nm Laser Diode K81S02M-15.00W:
15W output power 375µm fiber bundle diameter 0.22NA 808nm wavelengthApplications 808 nm Laser Diode K81S02M-15.00W:
Laser pumping Medical use Material processingSpecifications(25℃) | Symbol | Unit | K81S02M-10.00W | K81S02M-15.00W | |
| Optical data | CW-output power(1) | PO | W | 10 | 15 |
Center wavelength | lc | nm | 808 | ||
Tolerance of l | - | nm | ±3,±10 | ||
Temperature drift of l | - | nm/℃ | ~0.3 | ||
Fiber data(2) | Fiber core diameter | Wc | µm | 375 | |
Numerical aperture | NA | - | 0.22 | ||
Fiber connector | - | - | FC, ST, SMA-905 | ||
Electrical data | Operation current | Iop | A | 2.5 | |
Threshold current | Ith | A | 0.40±0.04 | ||
Conversion efficiency | η | % | 40 | ||
Slope efficiency | ηD | W/A | 4.8 | 7.0 | |
Operation voltage | Vop | V | ~10.0 | ~14 | |
Reverse voltage | Vre | V | ~10.0 | ~14 | |
Others(3) | Operation temperature | Top | ℃ | 10~30 | |
Storage temperature | Tst | ℃ | -20~+80 | ||
Expected lifetime | MTBF | h | >10,000 | ||
Dimensions (fiber and connector not included) | - | mm | 123×80×25 | ||
Weight | - | g | ~600 | ||
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