Active Components

Toshiba thyristor module MSG100U43Thyristor model:MSG100U43Features1,Patented free-floating silicon technology2,Low on-state and switching losses3,Designed for traction, energy and industrial applications4,Optimum power handling capability5,Interdigitated

Toshiba thyristor module MSG60L41Thyristor model:MSG60L41Features1,Patented free-floating silicon technology2,Low on-state and switching losses3,Designed for traction, energy and industrial applications4,Optimum power handling capability5,Interdigitated a

Toshiba thyristor module MSG100L41Thyristor model:MSG100L41Features1,Patented free-floating silicon technology2,Low on-state and switching losses3,Designed for traction, energy and industrial applications4,Optimum power handling capability5,Interdigitated

Toshiba thyristor module MSG60U41AThyristor model:MSG60U41AFeatures1,Patented free-floating silicon technology2,Low on-state and switching losses3,Designed for traction, energy and industrial applications4,Optimum power handling capability5,Interdigitated

Toshiba thyristor module MG100Q2YS50Thyristor model:MG100Q2YS50Features1,Patented free-floating silicon technology2,Low on-state and switching losses3,Designed for traction, energy and industrial applications4,Optimum power handling capability5,Interdigit

Toshiba thyristor module MSG100L43Thyristor model:MSG100L43Features1.IGBT module suitable for low voltage, 3 phase recifier applications2.IT(AV) 80A (each device)3.High Surge Current 2500 A (60Hz)4.Easy Construction5.Non-isolated.6.Mounting base as common

ABB Gate Turn-off asymmetric standard thyristor 5SGA 30J4502Thyristor type:Gate Turn-off asymmetric standard thyristor;Thyristor model:5SGA 30J4502Parameter:VDRM = 4500 VITGQM = 3000 AITSM =24×103AVT0 = 2.2 VrT = 0.6 mVDClink = 2800 VDescription:GTOs (Gat

ABB Gate Turn-off asymmetric standard thyristor 5SGA 40L4501Thyristor type:Gate Turn-off asymmetric standard thyristor;Thyristor model:5SGA 40L4501Parameter:VDRM = 4500 VITGQM = 4000 AITSM = 25×103AVT0 = 2.1 VrT = 0.58 mΩVDclink = 2800 VDescription:G

ABB Gate Turn-off asymmetric buffer layer thyristor 5SGF 30J4502Thyristor type:Gate Turn-off asymmetric buffer layer thyristor;Thyristor model:5SGF 30J4502Parameter:VDRM = 4500 VITGQM = 3000 AITSM = 24KAVT0 = 1.8 VrT = 0.70 mΩVDclink = 3000 VDescript

ABB Gate Turn-off symmetric thyristor 5SGS 12F4500 Thyristor type:Gate Turn-off symmetric thyristor;Thyristor model:5SGS 12F4500Parameter:VDRM, VRRM = 4 500 VITGQM = 1 200 AITAVm = 442 AITSM = 7 600 AVTO = 2.285 VrT = 1.796 mDescription:GTOs (Gate Turn-of