99.99%-99.9999% Indium - 4N-6N

Indium (In)


1, Physical character:
Atomic Weight: 114.818
Electronegative: 1.78
Density: ρ=7.31 g'cm_3 (0-100'C)
Melting Point: 156.5985 'C
Boiling Point: 2072 'C

2, Specification:
High Purity Indium:
In-05 Grade 99.999. The content of Indium is above 99.999%. The total content of AG, Al, As, CD, Cu, Fe, Mg, Ni, Pb, S, Si, Sn, Tl, & Zn is bellow 10 ppm;
Uitra Purity Indium:
In-06 Grade 99.9999. The content of Indium is above 99.9999%. The total content of CD, Cu, Fe, Mg, Pb, S, Si & Sn is bellow 1 ppm;
Uitra High Purity Indium:
In-07 Grade 99.99999. The content of Indium is above 99.99999%. The total content of AG, CD, Cu, Fe, Mg, Ni, Pb & Zn is bellow 0.1 ppm;

3, Physical Size:
Virgulate, Ingot, Granule.

4, Usage:
It is mainly used in the manufacture of III-V compound semiconductor, high purity alloy, transistor base and as a dopant of Germanium & Silicon single crystal.

5, Packing:
It is packed with dacron film, then covered with a sealed plastic film bag or vacuum sealed in a glass ampule.